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Design a circuit with a four-bit input representing the binary number A3A2A1A0. The output should be 1 if the input value is divisible by 3. Assume that the circuit is to be used only for the digits 0 through 9 (thus, values for 10 to 15 can be don't cares).
a. Draw the Karnaugh map and truth table for the function.
b. Determine the minimum expression for the function.
c. Draw the circuit, using only AND, OR, and NOT gates.
Using Kirchhoff's current law, determine the unknown currents for the networks of given figure:
Find the unit impulse responses of two systems specified by these equations and comment on their similarities and differences: 1) (D2 + 4D + 3) y (t) = (D + 5) x (t) 2) (D2 + 5D + 6) y (t) = (D2 + 7D + 11)x (t) .
What annual revenue is required to cover fixed costs? What will be the annual variable costs? How much will electricity cost per kWh?
Show what are the modulating indexes for the two components- design the power distribution of the transmitted signal and show what percentage of transmitted power spills into the guard band and what percentage of power spills to the adjacent channel..
If the load is disconnected and a capacitor of -j3.0 W is connected in its place, what is the secondary voltage of the transformer? What is its voltage regulation under these conditions?
The cylindrical surface ρ = 8 cm contains the surface charge density ρs = 5e -20|z| nC/m2. (a) What is the total amount of charge present. Not so concerned about the answer but more about the process.
Compare the filtered image with the noisy image.
A silicon diode has a reverse current of 5 uA and 25 degrees celcius and 100uA at 100 degrees celcius. What is the saturation current and surface leakage current at 25 degrees celcius
For the network of given figure: -Convert the voltage source to a current source.- Reduce the network to a single current source, and determine the voltage V1.
Suppose b is given, and we wish to determine the unknown parameter a which minimizes E. Is this a nonlinear problem? If so, show why. If not, determine a
A silicon semiconductor at T=300K is homogeneously doped with Nd=5e15 cm^-3 and Na=0. a) determine the thermal equilibrium concentration of free electrons and free holes. B) calculate the drift current density for an applied electric field of E=30..
Design a network realization of the transfer function below. Show the location of Ii and where the outputVo is taken. Also label all of the network element values. Vo / Ii = H s /(s+2)(s+4)
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