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a small cocentration of minority carrier is injected into ahomogeneous semiconductor crystal at one point. An electric feild of 10 V/cm is applied across the crystal and this moves theminority carriers a distance of 1cm in 20μsec. the mobilty (in cm2 /voltsec ) of the minority carriers is?
Design a 3-stage MOSFET amplifier that provides a differential gain |vo/vd| > 20V/V, a small common-mode gain, and an output resistance Ro >1kΩ. The amplifier is to drive a load RL = 10kΩ. The frequency of the signal source is 10 kHz.
The current in a device varies with time according to the function: i(t)= 3e^(-t/T) A. Where T is the time constant. How many time constants are required for the current to drop to 250 mA
Use the simulation timing diagram to compare the worse case time to do an operation with your ALU with the worst case using the 74LS381. State which operation takes the longest and list the time required for both ALU's.
If the efficiency of the motor and drive system is 80% and it is fed through a transistor regulator at 12V, what is the mean current through this regulator when the printer is working continuously?
For x(t) --> Linear System --> y(t), x(t) = u(t)-u(t-1) and h(t) = 2e^-t*u(t) Sketch x(t) and h(t) Write down the generic form of the convolution integral Calculate y(t) for t 1, using the convolution integral method.
Create the layout design for MOS inverter using a depletion-type transistor with VTL = -0.3V and an enhancement-type device with VTO = 0.5V such that tPLH is less than or equal to 15ns and tPHL is less than or equal to 1ns
A 3-phase, 60 Hz supply and two 3-phase synchronous machines are available. Determine the speed, and a suitable number of poles, for each synchronous machine to provide: a) A 3-phase, 180 Hz supply. b) A 3-phase, 500 Hz supply.
The voltage of a resistor is calculate by the Ohm`s Law: V = R I. write a program that will input resistance R, current I for several resistors, and will calculate and display the voltage for each resistor.
A sample of silicon contains 1x1018/cm3 donors. Below what temperature does it cease to show intrinsic properties if the band gap is 1.12ev and the intrinsic carrier concentration is 2x1016/cm3 at 300K.
The anode of the diode is connected to the inverting node of the op-amp, while its cathode is connected to the output of the op-amp. Determine the expression of the output node potential as a function of the input node potential.
Solve y"+y'-2y=2x^2, y(0) = 0, y'(0) = 1 following these steps a) find homogeneous solution, b) find nonhomogeneous solution with method of undetermined coefficient with constants evaluated,
Use rail voltages of +/-15V. Sketch the circuit diagram and the voltage transfer characteristic (Vout vs Vin) Discuss how you chose the values of the components and comment on how accurately you think you can achieve the specification.
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