Determine the maximum id and vgs for the circuit

Assignment Help Other Engineering

Reference no: EM131597564

Assignment

Answer /discuss the following 5 questions. Your answers should be 2-3 sentences long with detailed explanations. Also solve the following 4 problems and include detailed formulations, calculations and explanations.
Questions:

1) List the pre-cautions for handling MOSFETs.

2) Can you explain why ESD (Electro Static Discharge) can damage the MOSFET devices and not BJT

3) What is the difference between IGBT and IGFET?

4) Can you explain why the BJT (Bipolar Junction Transistor) is a bipolar device and FET (Field Effect Transistor) is a unipolar device? Explain why a unipolar device is faster in switching speed.

5) What MOSFET stands for? What is the difference between E-MOSFET and D-MOSFET?

Problems:

1) Determine the total input resistance in the following circuit. IGSS = 20 nA at VGS = - 10 V.

2) A certain JFET is biased in the ohmic region at VDS = 0.8 V and ID = 0.20 mA. What is the drain-to-source resistance?

3) Determine VDS for each circuit below. IDSS = 8 mA.

4) Determine the maximum ID and VGS for the circuit.

Reference no: EM131597564

Questions Cloud

Examine development of a positioning strategy : Tracy, one of your friends, is in the early stages of conducting a feasibility analysis for a small business consulting company.

Explain medical treatments including modern medicine : Describe the immunological response to the disease.What is the typical fate of the individual who catches this disease?

Purchased inventory-management computer software : Northern Specialties just purchased inventory-management computer software at a cost of $1,578,950.

Ethical implications of health care research : Explain the ethical implications of health care research relating to Patient DNA for research without the patient's knowledge or consent.

Determine the maximum id and vgs for the circuit : Determine the maximum ID and VGS for the circuit. Can you explain why ESD (Electro Static Discharge) can damage the MOSFET devices and not BJT.

Siemens management innovation program : Assessment fully and accurately describes the structure and responsibilities of Siemens' management innovation program.

Discuss fire prevention and life safety program : For this assignment, you will be developing a Fire Prevention Program that you will present via PowerPoint. You will draw ideas from both your occupational.

Which one would be best for today firms : Compare and contrast Kotter's 8 Step Model VS McKinsey 7-S Model ON how the different models work. Which one would be best for today's firms?

Researchers attempt to control extraneous variables : Extraneous variables may have an influence on the dependent variable. In what ways do researchers attempt to control extraneous variables?

User Account

All Pages