An ideal abrupt silicon pn junction has a

\(N_{A} = 2 x 10^{17} cm^{-3} , N_{D} = 2 x 10^{15} cm^{-3} , \)

1) With derivation steps, calculate internal potential barrier V0 at 300K and 400K, respectively;

2) Comment on the effect of temperature on Vo using an energy band diagram;

3) Determine the depletion (SCR) layer width W and the maximum field Em under equilibrium condition at T = 300K. Compare the depletion layer thick (xn and xp) on both side of the junction.

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