Compare the wafer throughput for positive photoresist

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Reference no: EM13248583

An optical lithographic system has an exposure power of 0.3 mW/cm2. The required exposure energy for a positive photoresist is 140 mJ/cm2 and for a negative photoresist is 9 mJ/cm2. Assuming negligible times for loading and unloading wafers, compare the wafer throughput for positive photoresist and negative photoresist.

Reference no: EM13248583

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