Demonstrate the fast diffusivity of fe in si

Reference no: EM131321157

It has been generally known to Si technologists (such as the CCD or Charge Coupled Device and high efficiency solar cell engineers) that iron impurity is a rather nuisance recombination center because it is highly unstable and its recombination activity disappears in a few days after the device is fabricated and sitting on the shelf.

(a) Demonstrate the fast diffusivity of Fe in Si by extrapolating the high-temperature diffusivity of Fe in Si (given Figure) to room temperature.

(b) If the generation-recombination volume of the CCD or solar cell is in a thin Si surface layer (about 1000A to allow efficient light penetration), and there is a sheet of atomic sink for Fe at 10μm from the Si surface, what is the duration of this instability?

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Reference no: EM131321157

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