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CASE STUDY
This assignment consists of a written report of approximately 1000 words and any diagrams in which you are asked to critically compare different process methods used to achieve the same result and show an awareness of current developments in semiconductor fabrication.
QUESTION
In the production of a CMOS gate the required doping may be achieved by thermal diffusion or by ion implantation.
Briefly describe each process and the relative advantages of each.
Identify which process is used in the various doping stages in the production of a CMOS gate.
Explain the effect upon doping methods as feature sizes in modern devices fall to well below the sub- micron feature size.
Verified Expert
This task is based on SEMICONDUCTOR STRUCTURE & FABRICATION and covered all details based on CMOS gate with word range of 1000 .
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PASS MERIT Criteria in excess of the pass grade. DISTINCTION Criteria in excess of the merit grade. Learning outcomes are satisfied as evidenced by substantially correct understanding of process methods and devices. The selection of appropriate methods/techniques as evidenced by the range of sources of information used, the justification of selection of methods and techniques and the synthesising and processing of complex information and data. The demonstration of convergent and creative thinking as might be evidenced by the application of innovation and creative thought, receptiveness to new ideas and effective thinking taking place in unfamiliar contexts.
Cognitive and Intellectual Skills 3. Select the appropriate processing steps required to realise a given semiconductor structure or device. 4. Critically compare different process methods used to achieve the same state in an overall structure. Practical and Professional Skills 5. Demonstrate an awareness of current developments in semiconductor fabrication. 6. Detail the need for cleanroom practise in the semiconductor industry. Key Transferable Skills 7. Apply numerical skills to a variety of problems relating to semiconductor structure and fabrication.
This assignment relates to cleanroom practice involved in the manufacture of semiconductor devices.. The assignment forms Element 4 of the module’s assessment criteria that covers in part Learning Outcomes 3, 4 and 5 as indicated below. MODULE LEARNING OUTCOMES Knowledge and Understanding 1. Demonstrate an understanding of the structure, properties and operation of a range of semiconductor devices. 2. Demonstrate knowledge of the processes and equipment involved in the manufacture of a range of semiconductor devices.
This assignment forms part of the formal assessment for this module. If you fail to reach the required standard for the assignment then you will be allowed to resubmit but a resubmission will only be eligible for a Pass grade, not a Merit or Distinction. You should therefore not submit the assignment until you are reasonably sure that you have completed it successfully. Seek your tutor's advice if unsure.
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