Already have an account? Get multiple benefits of using own account!
Login in your account..!
Remember me
Don't have an account? Create your account in less than a minutes,
Forgot password? how can I recover my password now!
Enter right registered email to receive password!
Consider an ideal pn junction diode at T=300K operating in the forwared bias region. Calculate the change in diode voltage that will cause a factor of 10 increase in current.I was trying to use the ideal diode current equation, but I don't know how to find Is from the given information. How do I work this problem?
The voltage of a resistor is calculate by the Ohm`s Law: V = R I. write a program that will input resistance R, current I for several resistors, and will calculate and display the voltage for each resistor.
How much hydrogen would be needed to give the car a range of 300 miles if the source of electricity is an on-board fuel cell with an efficiency that is 50% of the ideal?
An abrupt silicon pn junction at zero bias has dopant concentrations of Na = 1017/cm3 and Nd = 5 x 1015 cm-3 at T = 300K. (a) Calculate the Fermi level on each side of the junction with respect to the intrinsic Fermi level.
Design a 4-bit register with 2 control inputs s1 and s0; 4 data inputs I3, I2, I1, and I0; and 4 data outputs Q3, Q2, Q1, and Q0. When s1s0=00, the register maintains its value. When s1s0=01, the register loads I3....I0.
First do this problem for a 5x5 board and the point charge on the center square. Next do it for a 7x7 square and the point charge on the center square. Write a computer program for 101x101 board. derive a general expression for an infinite chessboa..
Determine the transconductance in the saturation region for the n-channel MOSFET using the following paramters at room temperature.1. p type Si density = 2.8*10^15 /cm^3 2. Si intrinsic carrier concentration = 8.6*10^9 /cm^3 3. Metal-semiconductor ..
Assume the initial state is steady (y = 0 at t = -0) a) Determine the transfer function of this process in the s domain. b) If the input is a ramp change in u(t) = 4t, determine the value of y(t) when t = 10s.
(Combinational Integer Multiplier) Draw the schematic for a 3-bit com- binational multiplier designed using partial product accumulation. (A,B are 3-bit inputs and S is a 6-bit output.) Use half/full adders in addi- tion to logic gates to build th..
One superhet, one homodyne, and one that downconverts to baseband receiver is operating in 700-750MHz. Pick a set of IF and LO frequencies, and identify any issues (images, spurs, LO harmonics in receiver band, services that interfere with IF)
An electrical device is designed to draw 4.0 amps. A 0.5 mm diameter copper wire is used to connect the device to a power source. What is the maximum allowable length of wire (in m), if the voltage across the wire is not supposed to drop by more t..
The output of an exclusive-NOR function is false only if exactly one of the inputs is true. Show the truth table of a two-input exclusive-NOR function, and implement it using AND gates, OR gates and NOT gates.
Consider a MOS device with the following parameters: Aluminum gate, p- type silicon substrate, oxide thickness of 20nm, and surface fixed oxide charge of 4x1010 cm-2 (a) Determine the doping concentration such that the threshold voltage is 0.5V.
Get guaranteed satisfaction & time on delivery in every assignment order you paid with us! We ensure premium quality solution document along with free turntin report!
whatsapp: +1-415-670-9521
Phone: +1-415-670-9521
Email: [email protected]
All rights reserved! Copyrights ©2019-2020 ExpertsMind IT Educational Pvt Ltd