Calculate the dose of the dopant

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Reference no: EM131793904

An NMOS transistor is being built and an ion implantation is done after the gate oxide is grown and before the gate polysilicon deposition, in order to adjust the threshold voltage by + I volt.

a. Which dopant should be used?

b. Calculate the dose of the dopant if the oxide thickness is 10 nm.

Reference no: EM131793904

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