Zero Biased Junction Diode
When diode is connected in the Zero Bias condition, no external potential energy is applied to PN junction. However if the diodes terminals are shorted together, a few holes in P-type material with enough energy to overcome potential barrier will move across the junction against barrier potential. This is known as the "Forward Current" and is denoted as IF
Similarly, holes generated in N-type material, find this situation favorable and move across the junction in opposite direction. This is called as the "Reverse Current" and is denoted as IR. This transfer of electrons and holes again and again across the PN junction is called as diffusion, as shown below.
The potential barrier which now exists opposes diffusion of any more majority carriers across junction. However, potential barrier helps minority carriers (few free electrons in the P-region and few holes in the N-region) to drift across the junction. Then "Equilibrium" will be established when the majority carriers are equal and both moving in opposite directions, so that the net result is zero current flowing in the circuit. When this takes place the junction is said to be in state of the "Dynamic Equilibrium".
The minority carriers are constantly generated because of thermal energy so this state of equilibrium can be broken by increasing the temperature of PN junction creating an increase in the generation of minority carriers, thereby resulting in the increase in leakage current but
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