Properties of p-n junction, Electrical Engineering

Properties of a p-n junction

The p-n junction possesses several interesting properties that have helpful applications in modern electronics. A p-doped semiconductor is comparatively conductive. The same is right of an n-doped semiconductor, but the junction among them can become depleted of charge carriers, and therefore nonconductive, depending upon the relative voltages of the two semiconductor regions.

Through manipulating this non-conductive layer, p-n junctions are generally employed as diodes: circuit elements which allow a flow of electricity in one direction but not in the other (reverse) direction. This property is described in terms of forward bias and reverse bias in which the term bias considers to an application of electric voltage to the p-n junction.

Posted Date: 1/11/2013 12:05:07 AM | Location : United States







Related Discussions:- Properties of p-n junction, Assignment Help, Ask Question on Properties of p-n junction, Get Answer, Expert's Help, Properties of p-n junction Discussions

Write discussion on Properties of p-n junction
Your posts are moderated
Related Questions
Design a 4-bit synchronous counter that has the following sequence: 0 ?4? 9?12 ? 14 ?15 and repeat using: i) JK FF ii)D FF

what is the reason for reduction in low frequency and high frequency regions in the frequency response of an Rc coupled amplifier?

A three-phase, 4160 V, 60 Hz, 3000 kVA generator supplies the following three phase loads:  A 00 kVA at .7 pf lagging, D 00 kVA at .9 pf lagging, and C 50 kVA at unity pf.

In this Project you will simulate a Security Alarm system using the Quick flash board. A switch is placed as shown in the figure below. The main goal of this project is: Task 1:

Illustrate the construction and principle of working of a linear variable differential transformer. Describe how the magnitude and direction of displacement of core of LVDT is dete

a. Explain the meaning of amplitude modulation? Show that the AM output having two sidebands and the carrier frequency. b. Illustrate that the equivalent parallel impedance of a

UJT as a  relaxation  oscillator The UJT  is a highly  efficient  switch  it is  used as trigger  a device for SCR. No sinusoidal oscillators saw tooth generators phase contro

From a source with P in = 2.4 mW, we want to get P out = 60 mW at a distance l = 20 km from the source. α for the transmission line is given to be 2.3 dB/km. The available amplif

Various compensation techniques

Normal 0 false false false EN-IN X-NONE X-NONE