Metal oxide field effect transistor, Electrical Engineering

Metal Oxide Field Effect Transistor

The metal-oxide-semiconductor field-effect transistor (MOSFET/MOS-FET/MOS FET) is a device employed for amplifying or for switching electronic signals. The fundamental principle of the device was first planned by Julius Edgar Lilienfeld in the year 1925. In MOSFETs, a voltage on the oxide-insulated gate electrode can make a conducting channel in between the two other contacts called drain and source. The channel may be of n-type or p-type, and is so called an nMOSFET or a pMOSFET (as well commonly nMOS, pMOS). It is by far the very much common transistor in both digital and analog circuits, although the bipolar junction transistor was at one time very much common.

The 'metal' in the name is now frequently a misnomer since the previously metal gate material is currently often a layer of poly silicon (polycrystalline silicon). Aluminium had been the gate material till the mid 1970s, while poly silicon became dominant, because of its capability to make self-aligned gates. Metallic gates are regaining popularity, as it is hard to increase the speed of operation of transistors with no metal gates.

IGFET is a related word meaning insulated-gate field-effect transistor, and is approximately synonymous with MOSFET, although it can refer to FETs with a gate insulator which is not oxide. Other synonym is MISFET for metal-insulator-semiconductor FET.

Posted Date: 1/11/2013 12:55:21 AM | Location : United States







Related Discussions:- Metal oxide field effect transistor, Assignment Help, Ask Question on Metal oxide field effect transistor, Get Answer, Expert's Help, Metal oxide field effect transistor Discussions

Write discussion on Metal oxide field effect transistor
Your posts are moderated
Related Questions
Specific Core Indicators Method This technique emphasizes to assign the responsibility and create the accountability. It is possible in which for any of the main indicators, t

Programming languages As we  have seen  the evolution of computer  hardware  similarly  programming  languages also  have their  history  of development from  machine  language

Q. Find the output function Y for the logic circuits of Figure (a) and (b). An AOI (AND-OR-INVERT) gate is shown in Figure with its two possible realizations. Obtain the output

Q. Explain the term total harmonic distortion. Describes the functionary of a total harmonic distortion analyzer. Total Harmonic Distortion: Nonlinear behaviors of circuit el

Ask question #Minwhat is biasing of clamper imum 100 words accepted#

Q.   Enumerate different types of errors in  measurement. How can these errors be minimized.                Sol. Types of errors: Errors may arise from different sources and

Q. Describe CCITT  hierarchical  structure  of  switching  and  routing  using  block schematic.  Ans: Hierarchical network are capable of handling heavy traffic where req

STAX Store  Accumulator  Indirect Instruction This  instruction is used to  copy data from accumulator to the memory  location pointed by register pair ( only  BC or DE pair).

Q. An n-channel JFET having V P = 3.5 V and I DSS = 5 mA is biased by the circuit of Figure with V DD = 28 V, RS = 3000 , and R 2 = 100 k. If the operating point is given by

When MT 2 is Negative  and g is positive In this  case  gate  current  flows  through  junctions P 2 N 2   electrons  are injected from  N 2   layer to  P 2   a result  junct