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How DRAM's are different from SRAM's? Why DRAMs are said to employ address multiplexing?
Dynamic RAM (DRAM) is fundamentally similar as SRAM, except that this retains data for only 2 or 4 ms on an internal capacitor. In this after 2 or 4 ms, the contents of the DRAM should be fully rewritten (refreshed) because the capacitors, that store logic 1 or logic 0, lose their charges. The whole content of the memory is refreshed along with 256 reads in a 2-to-4 ms interval. Refreshing also arises throughout a write, a read or throughout a special refresh cycle.
3. Why the external characteristics of a DC shunt generator is more drooping than that of a separately excited generator?
what is 2 bit counter?
Q. What is meant by armature reaction. Explain briefly the bad effects of armature reactions. Sol. By armature reaction is meant the effect of magnetic field set up
Get the equivalent inductance at terminal in circuit: Acquire the equivalent inductance at terminal AB in circuit shown in Figure. Solution Inductances also follow the
Design a low noise amplifier using an Infineon RF transistor BFP640. The amplifier is to be used to amplify the L2 GPS signal and so the centre frequency is 1227MHz and bandwidth 4
Q. For a pyramidal-horn antenna, the maximum directive gain is given by occurring when the aperture dimensions are A ∼ = √3λLandB = 0.81A. The principal-plane beam- widths
How wood a transfer function of a time-multiplexer with switching in 10 kHz between 2 channels look like?
The mobility of free electrons and holes for pure silicon are 0.13 and 0.05 m2/V-S respectively. Find the intrinsic conductivity for silicon. Assuming ni = 1.5x 1016/cm3 at room te
when MT 2 and Gate is Negative In this case gate current flows through P 2 N 3 junction. Junction N 1 P 2 forward biased hence the triac starts conduction through P
Q. What is permeability of magnetic material? For magnetic material media, the magnetic flux density B, expressed in tesla (T) or Wb/m 2 , and the field intensity H, expressed
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