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Use as few 2x2 MUXes as possible to design the following circuit. Your circuit outputs Z, which is the square root of the input, X if and only if X is a power of two, otherwise, the output Z=0. Assume the following range for X: 0 < X < 64.
A 78oham lossless planar line was designed but did not meet a requirement. What fraction of the widths of the strip should be added or removed to get the characteristic impedance of 75oham
Suppose the above device is to be used as an 8-way power splitter (let's say only the top-most input is used). Let the input power be P. Assuming a cross-coupling coefficient of f and ignoring excess losses, what are the possible power levels Pi a..
An input signal of 10V at 0 degrees is applied to a series RLC circuit with resistore R=100 ohm, inductor L=40 mH, and capacitor C = 0.5uF. determine what is The value of the total circuit complex impedence.
Mobile IP was intended to work with legacy correspondent hosts and legacy applications. However, some advantages may be gained if correspondent hosts are aware of mobility in certain ways.
Assume R1 = 1 M-ohm, R2 = 3 M-ohm, and C = 1.5 F. Also take the initial voltage across the capacitance to be VC(0) = 4 V. The voltage source VS has a voltage of 9 etV. The switch is closed at time t=0.
Design a circuit that satisfies the equation VOUT = - 3 * VB - 2 * VA. Draw the circuit schematic identifying supply voltages and show your work on component selection
two λ/2 dipoles are placed parallel to each other and spaced by a distance d = .15 λ , they are fed with antiphase currents so that I2=-I1=.7 Ampere, i- find the power radiated by the system taking into account the mutual impedance betwen the dipol..
Given a 16-bit number stored in memory at address x4000. Find theposition of the least significant zero. The program will need toload the number from memory and analyze it to detect the locationof the least significant zero.
Discuss the factors that determine transformer efficiency. What are some sources of transformer losses and how can these can be reduced
The steady-state electron distribution in silicon can be approximated by a linear function of x. The maximum electron concentration occurs at x = 0 and is n(0) = 2.0 x 1016cm-3. At x = 0.012cm, the electron concentration is 5.0 x 1015cm-3.
Using verilog hardware descriptional language or vhdl create a non-expandable dataflow description of a 2-bit magnitude comparator, from that create a behavioral dataflow description to create an expandable 2-bit magnitude comparator
(a) Determine free electron and hole concentration.(b) Calculate the effective density of states at valence band, Nv. Given that ni = 1x1010 cm3 and kT = 0.026.
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