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1. Consider an ideal metal-semiconductor junction between p-type silicon and polycrystalline aluminum. The Si is doped with N,1=5 x l01 cm·3. The metal work function is 4.28 eV and the Si electron affinity is 4.01 cV. Draw the equilibri um band diagram and detcnninc the barriers hei ght ¢R· 2. Consider the same silicon-aluminum metal-semiconductor junction. The cross-sectional area of the junction 1s 10 µm2. Assume that Be is 30 A K -2 cm-2 and the ideahty factor n is 1. Calculate the reverse saturation current and plot the 1-V curve as a function of applied bias.
Neglecting field-current changes, armature reaction, and armature inductance, find the initial and final values of the armature current and speed corresponding to each step.
Write a computer program that implements the estimation of a first-orderplus-dead-time transfer function with the tangent method and then determine the PID parameters using
Terephthalic Acid. (TPA) is produced by the reaction of p-Xylene. ,(PX) and Oxygen in the presence of a catalyst and solvent (S): Process conditions are provided for the Air
Explain the changes in flow depth when a supercritical flow flows over a smooth hump. Provide theoretical explanation to these changes using concepts of specific energy and
At one time, biologists thought that fungi were merely forms of plants that had lost their chlorophyll and had returned to saprotrophy to gain food. Why is this no longer co
A storage tank for concentrated nitric acid will be constructed from aluminum to resist corrosion. The tank is to have an inside diameter of 6 m and a height of 17 m. The ma
Neglecting stator resistance and rotational and stray-load losses, and assuming constant rotor resistance, calculate the starting torque and the maximum torque in per-unit o
Determine the pinch temperature and the minimum utility requirements for the process set out below. Take the minimum approach temperature as 15 °C. Devise a heat-exchanger n
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