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Q. What are the basic operations of MOSFET?
The gate to source voltage is set to zero volts by the direct connection from one terminal to the other,and a voltage Vds is applied the drain to source terminals.The result is the attraction for the positive potential on at the drain by the free electrons if the n-channel and a current similar to that established through the channel of the JFET.In fact the resulting current with Vgs=0V continues to be labeled Idss.
Vgs has been set at a negative voltage such as -1V.The negative potential at the gate will tend to pressure electron towards the p-type substrate and attract holes from p-type substrate .Depending on the negative bias established by Vgs ,a level of recombination between electrons and holes will occur that will reduce the number of free electron in the n channel available for conduction .The more negative the bias the higher rate of recombination .The resulting value of drain current is therefore reduced with increasing negative bias for Vgs.
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Q. A shift register can be used as a binary (a) divide- by-2, and (b) multiply-by-2 counter. Explain. Q. Show a block diagram of a 4-bit shift-right register using JKFFs.
Assume that an abrupt Si p-n junction with area 10-4 cm2 has NA=10 17 /cm 3 and ND=10 17 /cm 3 is working at room temperature. It is given that μ n = 700 cm 2 /v-s, μ P =250 cm
Instruction size As we have seen already that each instruction has two parts Opcode ( Operation Code) Which tells the types of operation to be performed .
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Illustrate the experts model of GPS System A fundamental expert system is made up of the below elements: Setting up an Expert System - Information is collected
Is there an opto-coupler that has a blocking voltage, VRRM, of greater than 800 volts? Perhaps, 1200 or 1600 volts? The manufacturer?
What are the different types of methods used for data transmission? The data transmission among two points involves unidirectional or bi-directional transmission of meaningful
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Extrinsic Material In addition to thermally generated carriers, it is possible to create carriers in the semiconductor by purposely introducing impurities into the crystal
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