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Q. What are the basic operations of MOSFET?
The gate to source voltage is set to zero volts by the direct connection from one terminal to the other,and a voltage Vds is applied the drain to source terminals.The result is the attraction for the positive potential on at the drain by the free electrons if the n-channel and a current similar to that established through the channel of the JFET.In fact the resulting current with Vgs=0V continues to be labeled Idss.
Vgs has been set at a negative voltage such as -1V.The negative potential at the gate will tend to pressure electron towards the p-type substrate and attract holes from p-type substrate .Depending on the negative bias established by Vgs ,a level of recombination between electrons and holes will occur that will reduce the number of free electron in the n channel available for conduction .The more negative the bias the higher rate of recombination .The resulting value of drain current is therefore reduced with increasing negative bias for Vgs.
i cant imagine of something called complex frequency...i find it important for laplace transformation,but i am lacking the physical explanation,please explain this to me
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basic configuration of field effect transistors in mplifiers
The output port of the one-port is defined by terminals A and B. Given: R 1 = 10 k_, R 2 = 20 k_, R 3 = 10 k_, and R 4 = 10 k_ V 1 = 20 V and I1 = 0.8 mA a) Find the T
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I want to know whether the circuits for both methods(linear polarization resistance and electrochemical impedance spectroscopy) are same or not?
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