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Q. What are the basic operations of MOSFET?
The gate to source voltage is set to zero volts by the direct connection from one terminal to the other,and a voltage Vds is applied the drain to source terminals.The result is the attraction for the positive potential on at the drain by the free electrons if the n-channel and a current similar to that established through the channel of the JFET.In fact the resulting current with Vgs=0V continues to be labeled Idss.
Vgs has been set at a negative voltage such as -1V.The negative potential at the gate will tend to pressure electron towards the p-type substrate and attract holes from p-type substrate .Depending on the negative bias established by Vgs ,a level of recombination between electrons and holes will occur that will reduce the number of free electron in the n channel available for conduction .The more negative the bias the higher rate of recombination .The resulting value of drain current is therefore reduced with increasing negative bias for Vgs.
Q. A silicon npn BJT is biased by the method shown in Figure, with R E = 240 , R 2 = 3000 , and V CC = 24 V. The operating point corresponds to V BEQ = 0.8V, I BQ = 110 µA,
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