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Q. What are the basic operations of MOSFET?
The gate to source voltage is set to zero volts by the direct connection from one terminal to the other,and a voltage Vds is applied the drain to source terminals.The result is the attraction for the positive potential on at the drain by the free electrons if the n-channel and a current similar to that established through the channel of the JFET.In fact the resulting current with Vgs=0V continues to be labeled Idss.
Vgs has been set at a negative voltage such as -1V.The negative potential at the gate will tend to pressure electron towards the p-type substrate and attract holes from p-type substrate .Depending on the negative bias established by Vgs ,a level of recombination between electrons and holes will occur that will reduce the number of free electron in the n channel available for conduction .The more negative the bias the higher rate of recombination .The resulting value of drain current is therefore reduced with increasing negative bias for Vgs.
Measurements made on the self-biased n-channel JFET shown in Figure are V GS =-1 V, I D = 4 mA; V GS =-0.5V, I D = 6.25 mA; and V DD = 15 V. (a) Determine V P and I DSS .
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20 cells with emf 1.45V and internal resistance 0.5Ω for each cells is linked 4 rows which every rows having of 5 cells in series. Load resistance 15Ω is connected to the battery.
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hello... i want to design a 1 to 8 demux with 4bit inputs and output. but i dont know the architecture in gate level. please help me... in fact, i need the architecture in gate lev
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