V-i characteristics - power semiconductor devices , Electrical Engineering

Assignment Help:

V-I Characteristics

 In the  normal  mode of  operation of an IGBT  a positive  voltage is applied to the collector relative to emitter. When  the gate is at zero potential with  respect to E no  collector current IC flows  for collector voltage VCE below the  breakdown level  VB. When VC < VB  and the gate voltage exceeds the threshold  value VGT, electrons  pass into the N- region ( base  of the P-N-p transistor).

1742_V-I Characteristics.PNG

                                                                        Figure V- I characteristics of IGBT

These electrons  lower the  potential of the N region  biasing the P+ - N_  junction thereby causing holes to be injected from  the P+  substrate into the N_ epi-layer region. The excess electrons and holes modulate the conductivity  N+ region which dramatically reduces the  on resistance of the device. With  zero gate  bins the forward characteristic  of  IGBT  shows  very low current (<1bA)  where it breaks up sharply to much larger current levels with only a slight  increase in voltage. The Vcharacteristics of IGBT  is shown  in figure  it show the relation  between  collector current  tc and collector to emitter voltage VCE  for different values of gate to  emitter  voltage VGE.

The junction J1 blocks reverse voltage. An IGBT  without  N+ buffer layer  has higher  reverse blocking  capability. Therefore  an IGBT  required  for blocking  high  reverse voltage  does not  have N+  buffer layer. The  reverse blocking voltage  is shown  as the VRM on the VI  characteristics. The junction J2 blocks the forward  voltage when the IGBT is off.

 

 


Related Discussions:- V-i characteristics - power semiconductor devices

What do you mean by noise, Q. What do you mean by Noise? In any communi...

Q. What do you mean by Noise? In any communication system there are usually two dominant factors that limit the performance of the system: 1. Additive noise, generated by el

Fsk scheme, Question: (a) An FSK Scheme is used in a wireless transmi...

Question: (a) An FSK Scheme is used in a wireless transmission with the data bits 1011010. With the help of a labeled diagram, describe in detail the final output of the MSK

Calculate the amplitude and the frequency of the sine wave, (a) The key el...

(a) The key elements of a protocol are the syntax, semantics and timing. Give a brief explanation of each of these key elements. (b) A file contains 4 million bytes. Compare

Define integrated circuits, Q. Define Integrated circuits? For the fabr...

Q. Define Integrated circuits? For the fabrication of semiconductor circuits, there are three distinct technologies employed: 1. Discrete-component technology, in which each

Intrinsic material, Int r insic Material A perfect semicon...

Int r insic Material A perfect semiconductor crystal with no impurities or lattice defects. No carriers at 0 K, since the valence band is completely full and t

Find the force between the wires, Q. A magnetic force exists between two ad...

Q. A magnetic force exists between two adjacent, parallel current-carryingwires. Let I1 and I2 be the currents carried by the wires, and r the separation between them.

Calculation of AT&C loss, how to make a matlab program for calculation of A...

how to make a matlab program for calculation of AT&C loss for perticular area

CRO probe, #question. passive probe .

#question. passive probe .

Fraction of the total cross section - interaction processes, Determine and ...

Determine and plot for 5 keV to 100 MeV the fraction of the total cross section due to each of the four interaction processes for      (a) hydrogen,      (b) nitrogen,

Write Your Message!

Captcha
Free Assignment Quote

Assured A++ Grade

Get guaranteed satisfaction & time on delivery in every assignment order you paid with us! We ensure premium quality solution document along with free turntin report!

All rights reserved! Copyrights ©2019-2020 ExpertsMind IT Educational Pvt Ltd