Already have an account? Get multiple benefits of using own account!
Login in your account..!
Remember me
Don't have an account? Create your account in less than a minutes,
Forgot password? how can I recover my password now!
Enter right registered email to receive password!
Switching characteristics
When a positive signal is applied GTO starts conducting before initiation of conduction anode current is zero and anode to cathode voltage Vak is the peak reverse voltage. When conduction starts anode current rises from to full value and the anode to cathode voltage Vak becomes very small when a negative gate signal is applied the anode current becomes zero and the Vak rises to peak revise voltage. The total turn OFF time can be divided in three distinct times storage time fall time and tail time the switching characteristic of a FTO is shown in figure.
As soon as negative gate signal is applied turn OFF process starts immediately. The time clasping between application of negative gate current till this current reaches its negative peak value known as storage time. During this period the excess charges are removed by the negative gate current and GTO gets ready to turn OFF. During fall time tf the anode current decrease rapidly and anode to cathode voltage rises. This time tf in most GTO is about at the end to tf the current falls slowly to zero value during tail time tf. At the end to the tail time the anode current Ia becomes zero and Vak becomes equal to peak reverse voltage.
There are many advantages and disadvantage of GTO over thyristor some advantages of GTO are as follows:
a.Commutation circuit is not needed
b.Fast switching speed
c.More di / dt at turn ON
d.Higher efficiency because losses in commutations circuit is eliminated
e.Circuits using GTO are compact
f.Lesser acoustical and electromagnetic noise due to elimination of choke of commutation
Speed Control of DC Shunt Motor V dc the output of rectifying circuit which is applied to the motor field as shown in figure for armature voltage V dc is controlled by
Explain Memory Mapped I/O Scheme. Memory Mapped I/O Scheme: In this scheme there is only one address space. Address space is explained as all possible addresses which microproc
Q . Materials that can store electrical energy are called (A) magnetic materials. (B) semi conductors. (C) dielectric materials. (D) super conductors. Ans: C
RLC Rotate Accumulator Left Instruction This instruction also rotates the contents of the accumulator towards left by one bit. The D 0 bit moves to D 1 bit moves to D
Design and using Pspice, evaluate a single-stage transistor amplifier amplifier to meet the following specifications: * Power supply - 12V dc. · *Voltage gain - 120 when Vin
Analysis of thermistor as a bias compensation
Sectoral Overview and Enabling Framework Previously, you have studied about several Acts and Policies relevant to the power sector, their aims, main features and implications
Q. Find the exponential form of the Fourier series of the periodic signal given in Figure. Also determine the resulting series if T = 2τ .
Increment contents of Register Content of register are incremented by one and the results is stored in the same register R. It is an exceptional case in which accumu
what is bias compensation
Get guaranteed satisfaction & time on delivery in every assignment order you paid with us! We ensure premium quality solution document along with free turntin report!
whatsapp: +91-977-207-8620
Phone: +91-977-207-8620
Email: [email protected]
All rights reserved! Copyrights ©2019-2020 ExpertsMind IT Educational Pvt Ltd