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Q. Consider the MOSFET circuit with variable voltage, with RD = 2k and VDD = 12 V. The static characteristics ofthe n-channel enhancement MOSFET are given in Figure.
(a) Drawthe load line and find the operating point if vGS = 4V.
(b) Sketch the resulting transfer curves (i.e., iD and vDS as a function of vGS) showing cutoff, active, and saturation regions.
(c) For relatively undistorted amplification, the MOSFET circuit must be restricted to signal variations within the active region. Let vGS (t) = 4 + 0.2 sin ωt V. Sketch iD(t) and vDS(t), and estimate the resulting voltage amplification Av.
(d) Let vGS (t) = 6 sin ωt , where ω is slow enough to satisfy the static condition. Sketch iD(t) and vDS(t) obtained from the transfer curves. Comment on the action of the MOSFET in the switching circuit.
Q. In an RLC series circuit excited by a voltage source v(t), for R = 10 , L = 1 H, and C = 0.1F, determine v(t) if the capacitor voltage vC(t) = 5e -10t V.
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