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When a P-type semiconductor is suitably joined to an N-type semiconductor, then resulting arrangement is called P-N junction or P-N junction diode
Depletion region: On account of difference in concentration of charge carrier in the two sections of P-N junction, the electrons from N-region diffuse by the junction into P-region and the hole from P region diffuse into N-region.
Because of diffusion, neutrality of both N and P-type semiconductor is disturbed, a layer of negative charged ions appear near the junction in the P-crystal and a layer of positive ions appears by the junction in N-crystal. This layer is known as depletion layer
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tunnel diode
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