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When a P-type semiconductor is suitably joined to an N-type semiconductor, then resulting arrangement is called P-N junction or P-N junction diode
Depletion region: On account of difference in concentration of charge carrier in the two sections of P-N junction, the electrons from N-region diffuse by the junction into P-region and the hole from P region diffuse into N-region.
Because of diffusion, neutrality of both N and P-type semiconductor is disturbed, a layer of negative charged ions appear near the junction in the P-crystal and a layer of positive ions appears by the junction in N-crystal. This layer is known as depletion layer
A holiday light string of ten bulbs is equipped with shunts that short out the bulbs when the voltage drop increases to line voltage, which happens when a bulb burns out. Every bul
A 50.0-g toy car travelling with a velocity of 3.00 m/s due north collides head-on with a 180.0-g fire truck travelling with a velocity of 0.50 m/s due south. The toys stick to
Lens: A transport refractive body bonded by one or two spherical surface known as lens. There are various kinds of lenses. e.g. Double convex Lens Double concave lens
Q. Dissimilarity between an intrinsic and extrinsic semiconductor? Answer:- Semiconductors permit only a little amount of light to pass through them. They are of two n-kin
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For silicon the forbidden gap is (A) 1.1ev. (B) 0.25ev. (C) 0.5ev. (D) 0.7ev. Ans: For silicon the forbidden gap is 1.1ev.
Q. How much should be the voltage of an X-ray tube so that the electrons emitted from the cathode may give an X-ray of wavelength 1 A o after striking the target? λmin = 124
Can instantaneous velocity answer instantaneous speed be equal in uniform motion
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