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a) Sketch the variation of electron concentration with temperature for
i) an n-type semiconductor doped with 1021 donors m-3
ii) an intrinsic semiconductor.
b) Explain briefly why the intrinsic carrier concentration at a given temperature is greater for germanium than for silicon.
c) At a temperature of 293 K an intrinsic semiconductor has an electron mobility of 0.12 m2V-1s-1 and a hole mobility of 0.07 m2V-1s-1.
If its resistivity is 35 :m, calculate the intrinsic carrier concentration. Hence calculate the hole concentration when the semiconductor is doped with 1021 donors m-3.
d) If a voltage of 0.5 V is applied across the opposite faces of a sample of the above intrinsic semiconductor (in part c) of thickness 0.2 mm, determine the approximate total current density and the average drift velocity of the holes.
The resistance of 1.5 km of wire of cross-sectional area 0.17 mm 2 is 150Ω. Determine the resistivity of the wire.
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