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Given an n-channel enhancement MOSFET having VT = 4V, K = 0.15 A/V2 , IDQ = 0.5A, VDSQ = 10 V, and VDD = 20 V. Using the dc design approach outlined in this section, determine VGSQ,VG,RD,RS,R1, and R2.
Number Systems Various number systems are decimal ( used by human beings) binary ( used by digital systems) octal and hexadecimal (used to represent binary numbers in small
Q. What is Enhancement MOSFETS? Figure illustrates the cross-sectional structure of an n-channel enhancement MOSFET and its symbol showing as a normally off device when used fo
Determine the node voltage: Determine the node voltage V and then current flowing through each element by using KCL. Solution Apply KCL at the node whose voltage is V.
Explain the Synchronous Compensators These are synchronous motors running without mechanical loads (or with load if required). Similar to the synchronous generators, they can a
Q. How can a JFET be used as a voltage controlled resistor. Explain from drain characteristics? The region to the left of the pinch off locus is referred to as the ohmic region
Q. Consider the magnetic circuit shown in Figure. Assume the relative permeability of the magnetic material to be 1000 and the cross-sectional area to be the same throughout. Deter
Hello may i know if it is possible for me to teach online on electrical maters?
Calculate the mechanical speed of rotar: An asynchronous machine of 460V, 25hp, 4 poles with rotor wound in Y has the following data (of the side stator): Resistance of the
Disadvantages of SDR 1. Power consumption is more due to rapid switching of modes 2. Hardware design is not easy 3. Software bugs exist in the system
Q. How do you differentiate between dual beam and dual trace oscilloscope? Sol. There are two separate vertical input channels A, B and these use separate attenuator and prea
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