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a) Sketch the small-signal equivalent circuit for a field-effect transistor (FET) and explain how it can be deduced from the properties of the real device.
b) Draw the circuit diagram for a common-source FET ac amplifier based on a voltage-divider bias scheme.
c) Draw the ac equivalent circuit for the above amplifier.
d) If the transconductance of the FET used in a common-source amplifier is 3.4 x 10-3 S and the load resistance is 4.7 kΩ, what is the approximate voltage gain of the amplifier?
The stress at which the specimen breaks or reptures ultimately is known as ultimate strength. We also called this TENSILE STRENGTH .
Define the construction of ultrasonic magnetostriction method. Construction: The ends of the ferromagnetic rod A and B are wound through the coils L 1 and L as given in fi
two insulated charged copper spheres A and B of identical size have charge q and -3q respectably .when they are brought in contact with each other and then separated,what are the n
Earth's atmosphere is separated into four layers: The troposphere (0-10 km), the stratosphere (10-50 km), the mesosphere (50-80 km), and the thermosphere (80-500 km).
(a) You have studied that plane and convex mirrors produce virtual images of objects. Can they generate real image under some circumstances? Explain. (b) A virtual image we a
Give any two methods of electric lines of force. Sketch them for an isolated positive point charge.
i have to make an assignment on this topic plz suggest me how can i make this?
Galilean Relativity Galilean invariance or Galilean associatively states which the laws of motion are the similar within all inertial frames. Galileo Galilei first define this
No;(Personal Note:Please Rate this and let me know if this helps) Reason: From the quantisation of charge charactersistic, we can say that charge comes in integral multiple of e (
There are six properties of surface tension:- Normal 0 false false false EN-IN X-NONE X-NONE MicrosoftInternetExplorer4
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