How does B-H hysteresis curve be understood in terms of domain growth and domain rotation?

There are two possible ways to align a random domain structure by applying an electric field. One is to rotate a domain in the direction of field and other is to allow the growth of the favourably oriented domains at the expense of less favourably oriented ones. If domain  structure  is  compared  with  grain  structure  of  a  polycrystalline  material,  boundaries  separating  the  domains  known as called  domains  walls  are  analogue  of  grain boundaries. Domain boundary energy is about 0.0002 J/m². Domain walls however are  some  two  orders  of  magnitude  thicker  than  grain  boundaries,  since there  is  a gradual transition from one domain orientation to next across the wall. Additionally domain boundaries can exist within the grain. Analogous to grain growth, domain walls can move such  that  more  favourably  oriented  domains  grow at  expense  of  others.  In earlier stages of magnetization below the saturation region of hysteresis curve, domain growth is dominant.  Growth  is  more  or  less  complete  as  the  saturation  region  is  approached.