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Explain briefly, with the help of circuit diagram, how V - I characteristics of a p-n junction diode are obtained ii
(i) forward bias, and
(ii) reverse bias.
Illustrate the shape of the curves obtained.
(b) A semiconductor has equal electron and hole concentration of 6 x 108 /m3. On doping with certain impurity, electron concentration increases to 9 X1012 /m3.
(i) Recognize the new semiconductor obtained after doping.
(ii) Calculate the new hole concentration
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define non flow process
various techniques involved in crystal growth
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