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Explain briefly, with the help of circuit diagram, how V - I characteristics of a p-n junction diode are obtained ii
(i) forward bias, and
(ii) reverse bias.
Illustrate the shape of the curves obtained.
(b) A semiconductor has equal electron and hole concentration of 6 x 108 /m3. On doping with certain impurity, electron concentration increases to 9 X1012 /m3.
(i) Recognize the new semiconductor obtained after doping.
(ii) Calculate the new hole concentration
expression for the interference in transmitted light through thin films
Five volts are applied across the plates of a parallel plate capacitor. The distance of separation of the plates is .02 meters. What is the magnitude of the electric field inside t
Calculate curl A. Where
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The force applied at A is P30 Newton's, and P31 and P32 are dimensions in mm. A mechanic uses his left hand to support the wrench at point B. Determine the upward force required a
Q. Situation of the converging lens - Principle Ray 1? Principle Ray I . The easy one just as in the case of the converging lens this ray goes straight through the centre of t
A car of mass 800 kg is pulling a trailer of mass 300 kg up the slope of angle ? to the horizontal where sine ? = 1/200. Resistance to motion (apart from gravity) is 1.5 N per kg o
Show the conditions for total internal reflection to happen. Arrive at the relation between refractive index and critical angle. What do you mean by optical fibre? on what rules do
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a mild steel wire of length 1mand cross sectional area 0./10^2 cm^2 is stretched. within the elastic limit horizontally between two pillars. a mass of 100g is suspended from the mi
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