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Explain Epitaxial Growth
Epitaxial Growth - Refers to the growing of a crystal using one more crystal as the substrate, like that the atomic arrangement is continuous across the interface without the formation of a grain boundary. Homoepitaxy refers to silicon grown on silicon; the substrate and he grown crystal usually vary in the level and type of doping. Hetroepitaxy refers to a substantially different composition grown on the substrate.
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Calculate ?G of Eqs?IX-1 and IX-2 for the case of n-octane and plot against r over the range r=5 to 3ooA and for the two cases of x=2 and x=250.Assume 20? IX-1:?G=-n?µ+4pr2? IX-2:?
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BLOW MOLDING
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