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Doping:
Silicon and Germanium have low values of electrical conductivity because of few free electrons. In order to improve the electrical conductivity of semi conductors' pentavelent element such as Phosphorus or Arsenic or a trivalent element Boron or Indium is added to Silicon and Germanium. This process is known as doping.
OR
The process of mixing of small quantity of Arsenic or Phosphorus in silicon or Germanium to make a n-type substance or Boron or Indium in Silicon or Germanium to make P-type substances is known as doping.
My question is that if voltage is increased, the electrons will move faster and the distance between them is changed. Why?
Which quantity is unchanged during refraction of light? Describe critical angle. Show an application of total internal reflection.
Q. In an ideal transformer, the transformer ratio is 1:20.The input voltage and the input power are 6 V and 600 mW respectively. Compute the primary and the secondary currents.
i need an assignment on spectrophotometer
Details about halls effect
how can we find the value of g
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A ray of light travelling in air is incident on a prism and passes through it with a speed of 2X10 8 ms -1 parallel to its base. If the angle of refraction is similar to half of
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