Explain about the Homojunction Laser in brief.

Homojunction Laser:

Assume that GaAs be doped with T providing n-type material and with Ge providing p-type material. In forward bias (p-type side is made positive), the majority carriers that is, the electrons into n-side and the holes into p-side are injected across the depletion area into both directions to create a population inversion into a narrow active region. The light produced through radioactive recombination across the band gap is confined within this active region.

Typical output optical power verses diode current (f) characterises and the corresponding output spectrum of a laser diode.