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In computing the electric field at a point call it point P in the first quadrant of a Cartesian coordinate system because of a continuous charge distribution from 0 to L on the x-axis we must take into account the fact that each element of charge makes a vector contribution to the electric field at point P that is in a different direction than that of the vector contribution from any other charge element. The vector contributions should be added as vectors and we usually deal with this by adding the x-components of all the vector contributions to get the x-component of the total electric field at point P then adding the y-components to get the y-component of the total electric field and finally putting the components together to write an expression for the total electric field.
Now suppose that we are computing the magnetic field at point P to a wire segment that carries current along the x-axis from 0 to L. Does the reality that the contribution to the magnetic field due to each infinitesimal element of the current-carrying conductor is a vector leads to the same complications that we find in the case of the electric field due to a line segment of charge?
Cannon of mass 5m (having a shell of mass m) is at rest on a smooth horizontal ground fires the shell with its barrel at an angle A with the horizontal at a velocity u relative to
Using an Optical Bench This applet permits users to simulate standard optic elements that is lens, mirror, dielectrics, sources, apertures and observe the ways in which light r
what is nicol prism?
How nikol prisim can use as polarizer and analyzer
In Rutherford's experiment including the deflection of alpha particles by atomic nuclei, the fact that some of the alpha particles bombarding the thin gold foil were back-scattered
In the movie The Shooter starring Mark Wahlberg, it is claimed that coriolis forces need to be taken into consideration when taking a shot at a target 4 kilometres away. To test
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Silicon has 1.45 x 10 10 free electrons/cm 3 at room temperature. If you wanted to have 3x10 6 as many electrons from arsenic doping as thermal free electrons from silicon at ro
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Consider a pentavalent impurity such as phosphorus (P, Z = 15) is doped in a pure semiconductor germanium (Ge, Z = 320. Each phosphorus atom forms four covalent bonds with four ger
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