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For a reversible process involving ideal gases in a closed system, show that
ΔS = Cv ln(T2/T1) for a constant volume process
ΔS = Cp ln(T2/T1) for a constant pressure process
ΔS = R ln(V2/V1) = R ln(P1/P2) for an isothermal process
b. Determine the change in entropy when 2 kg of a gas at 277 K is heated in a closed, rigid container to a temperature of 368 K. Take the specific heat at constant volume to be 1.42 KJ/Kg.K
c. Calculate the entropy change when 1 kmol of an ideal gas at 300 K and 10 bar expands to a pressure of 1 bar if the temperature stays constant.
d. What is the change in entropy when 1 kmol of an ideal gas at 335 K and 10 bar is expanded irreversibly to 300 K and 1 bar? C = 29.3 KJ/(kmol K)
(a) De?ne surveying. Brie?y describe about chain and accessories. (b) Sketch the plan and suitable section of a single room having 5.0 m X 4m size and 3m height. Assume the ba
The device through which chemical energy is converted into electrical energy is known as galvanic cell or electrochemical cell or voltaic cell. In a galvanic cell, a redox reaction
assignment on antiferromagnatism
Q. Extraction of Iron oxide and titanium dioxide? Iron oxide and titanium dioxide do not dissolve in the alkali and are filtered off as sludge. The solution is cooled and most
Principle underlying the quantitative analysis: In flame photometry, the thermal energy from flame is utilized to convert the analyte within gaseous atoms and then to excite t
Sublimation - Purification of organic compounds Specific organic solids on heating directly change from solid to vapour state without passing via a liquid state, such types of
I want to know about 3 laws of crystallography,there are Law of constancy of inter facial angles,Law of rational indices,Law of symmetry.
Sedimentation: The process of allowing w ater to stand undisturbed in big tanks for some time in order to facilitate the settling down of the course suspended particles due to th
h0w ll make presentati0n 0n it??
Differentiate between extrinsic and intrinsic semiconductor. Obtain an expression for the carrier concentration for an intrinsic semi-conductor. Also demonstrate that Fermi level i
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