Compare MOSFET with JEFT ?

a. In enhancement and depletion types of MOSFET, the transverse electric field induced across an insulating layer deposited on the semiconductor material controls the conductivity of the channel. In the JEFT the transverse electric field across the reverse biased PN junction controls the conductivity of the channel.

b. The gate leakage current in a MOSFET is of the order of 10^-12 A. Hence the input resistance of a MOSFET is very high in the order of 10¹⁰ to 10¹⁵ W. The gate leakage current of a JEFT is of the order of 10^-9 A and its input resistance is of the order of 10⁸ W.

c. The output characteristics of the JFET are flatter than those of the MOSFET and hence, the drain resistance of a JFET (0.1 to 1 MW) is much higher than a MOSFET (1 to 50 MW).

d. JFETs are operated only in the depletion mode. The depletion type MOSFET may be operated in both depletion and enhancement mode.

e. Comparing to JFET, MOSFETs are easier to fabricate.

f. MOSFET is very susceptible to overload voltage and needs special handling during installation. It gets damaged easily if it is not properly handled.

g. MOSFET has zero offset voltage. As it is s symmetrical device, the source and drain can be interchanged. These two properties are very useful in analog signal switching.

h. Special digital CMOS circuits are available which involve near-zero power dissipation and very low voltage and current requirements. This makes them most suitable for portable systems.

i. MOSFETS are widely used in digital VLSI circuits than JFETs because of their advantages.