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what is cro ?
Simulation of a pn Junction An n + p junction is fabricated on a p-type silicon substrate with N A = 8×10 15 cm -3 . The n+ region has a concentration of N D = 1.5×10 18
A JFET for which V A = 80 V, V P = 4 V, and I DSS = 10 mA has a quiescent drain current of 3 mA when used as a common-source amplifier for which R D = R SS = 1k and R L = 3k
write a short note on Scale
Q. The voltage wave form of Figure is applied to an RLC series circuit with R = 2, L = 2H, and C = 1 F. Obtain i(t) in the series circuit. (Note that the capacitor and inductor va
Surge Current It is the maximum admissible peak value of a sinusoidal half cycle of 10 ms duration at a frequency of 50Hz. The value is specified at a given junction tem
Q. Let the solenoid carry an alternating current of 10 A (rms) at 60 Hz instead of the direct current. Find an expression for the instantaneous force.
what are measuring devices?
the p.u. reactance of a 25 MVA, 13.2 kV alternator 0.5 p.u. On a base of 50 MVA and 13.8 KV the p.u. value shall be
The armature of a four-pole dcmachine has a simplex lap wound commutator winding (which has the number of parallel paths equal to the number of poles) with 120 two-turn coils. If t
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