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Layered structures. The device in Figure 4.67 is made as follows: A spherical conductor of radius a is surrounded by a dielectric shell of outer radius b and permittivity ε1. This shell is surrounded by another spherical shell of outer radius c and permittivity ε2. On top of this, there is a conducting shell with outer radius d. A potential Vo is connected between the outer and inner conductors as shown in Figure 4.67. Calculate the charge density on the inner and outer conductors. Where is this charge density distributed?
The FM input to a PLL demodulator has an unmodulated center frequency of 10.7 MHZ. (a) To what frequency must the VCO be set (b) From which circuit is the recovered modulating signal taken
design a wide band pass filter with cut-off frequency fl 400 khz fh 600 khz and a pass-band gain 10. the roll-off
An unknown semiconductor has Eg = 1.1 eV and Nc = Nv. It is doped with 10^15 cm^-3 donors where the donor level is 0.2 eV below Ec. Given that Ef is 0.25 eV below Ec, calculate ni and the concentration of electrons and holes in the semiconductor a..
Four 18W lamps are connected in parallel across 6V. Draw circuit. What is the current though each lamp What is the resistance of each What is the effective resistance of the combined four lamps
Design a BJT mixer with conversion gain of 10dB for an IF load of 1 kohm and a LO amplitude of 10 mV. The RF frequency should be 707 KHz and the IF frequency should be 455 KHz. Hint: calculate the bias components for a VCC of 9 V
Knowing that for the extruded beam shown the allowable stress is 120 MPa in tension and 150 MPa in compression, determine the largest couple M that can be applied.
1. Compute the probability of having the sum of 10 by throwing (a) two dice, (b) three dice. 2. What is the probability of three of a kind for a poker hand with (a) a card deck of 52 cards, (b) a card deck of 32 cards by removing all cards of numb..
what is the time response for a closed loop transfer functionhs 10s2 s 1 to delta function
explain the difference betweem poly to poly capacitors, pn junction capacitors and MOS capacitors in CMOS analog design
Specify the range required for the control voltage VGS and the required transistor width W. It is required to use the smallest possible device, as limited by the minimum channel length of this technology (Lmin = 0.18 μm) and the maximum allowed v..
A 25KW, 250V dc shunt generator has armature and field resistances of 0.06 ohm and 100 ohm respectively, determine the total armature power developed when working (1) as a generator delivering 25KW output and (2) as a motor taking 25KW
If a lamp has a resistance of 120 ohm when it operates at a power of 1.00 x 10^2 W, what is the potential difference across the lamp?
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