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Suppose the RTD of (108.1 Ohms) has a dissipation constant of 25mW/°C and is used in a circuit that puts 8 mA through the sensor. If the RTD (108.1 Ohms) is placed in a bath at 100°C, what resistance will the RTD have? What then is the indicated temperature?
The op-amp circuit measures the changes of temperature in a system. The output voltage is given by v0(t) = -R(t)vi(t). Suppose that the temperature in the system changes cyclically after t = 0, so that R(t) = [1 +0.5 cos(20πt)] u(t) and let the in..
A Si sample is doped with 10^17 As atoms/cm^3. What is the equilibrium hole concentration P0 at T=300K?
Derive the expression for TRANSFER FUNCTION and write the expression for magnitude and phase of H(f).
Describe the functionality of the above DFSM using transition tables. Consider that the system starts always from state B. What happens if the system will start from another state - say A?
Determine the standing wave pattern for the voltage in the line. Express the result in real insantaneous form and simplify
Saw on internet some equations to convert from frequency in hertz to mph. Some equations need a gear ratio while others do not. I found the equation mph = circumference * RPM * 60.
From what distance must the electron be red if it is to just fail to strike the plate?
A terrestrial radio link transmits a CDMA signal from a base station using a spreading code with a chip rate of 1.0 Mchips per seconds. The message data rate of the signal is 10 kbps.
Draw the logic diagram for the following Boolean expressions. The diagram should correspond exactly to the equation. Assume that the complements of the inputs are not available. a.) XYZ+X'Y'+X'Y'
What memory modules are needed if the customer wants 1.25GB of RAM?(What capacities and how many of each capacity?)
Describe the charge diffusion and drift in a PN junction, without and then with an applied voltage
In comparing the behaviour of an n-channel MOSFET with a p-channel device having identical geometry and threshold voltage, it is found that the n-channel FET has a greater drain current than that of the p-channel FET.
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