Already have an account? Get multiple benefits of using own account!
Login in your account..!
Remember me
Don't have an account? Create your account in less than a minutes,
Forgot password? how can I recover my password now!
Enter right registered email to receive password!
Given a DRAM array with 512 word-lines and 512 bit-lines:a. What is the total storage capacity of this DRAM array?b. Whether reading consecutive 20 bits from the same wordline would consume about 20 times more energy than reading 1 bit from this wordline?
c. Whether reading consecutive 20 bits from the same bitline would consume about 20 times more energy than reading 1 bit from this bitline?
Determine the settings Z1, Z2 & Z3 for the relay at B12.
A simple voltmeter with a full-scale reading of 50(V) is required. Use a d'Arsonval movement with a rating of 20(mV) at 1 (mA). Calculate the value of the voltmeter resistor, Rv, required to achieve these design specifications.
Write down the principle of energy conversion and give an example for single and double excited system.
Finding appropriate source for the electrical load, Have four circuits. One takes 9Vdc, two 5Vdc, and last one takes 12Vdc. Have variable transformer for source. How do I calculate or choose the voltage needed to run all four circuits with out blo..
A fiber optic audio system consists of an input, a playback head that has a transfer function of .7, an amplifier with a gain of 6 and a speaker system with a transfer function of .4. Find the output for an input of 0.08V
a. Calculate the optimum refractive index of a single layer thin film antireflection coating for the silicon air interface at this wavelength. b. Calculate the optimum thickness of the layer.
The Finite-Difference Time-Domain (FDTD) method is a computational electromagnetic technique for solving for the electric and magnetic fields in arbitrary spatial domains in the time domain
A Si bar is 0.25 cm long and 500 ?m2 in cross-sectional area. It is grounded at x=0 and biased at +20V at x=0.25 cm. Find the resistance and the current at 300K (a) when the Si bar is doped with 2×1017 cm-3 arsenic
The forward-bias current in a GaAs pn-junction at T = 300 K is ID = 15 mA. The reverse-saturation current is IS = 10^-19 A. Determine the required forward-bias diode voltage.
A 3-D cubic unit cell contains four atoms whose centers are positional halfway up along each of the vertical cell edges and one atom each centered in the middle of the top and bottom faces. Make a sketch of the unit cell.
How many voice channels are carried by a E1 transmission given 8 kHz sampling and 8 bit words? Why is an end of frame marker always required in a digital telephony system?
steam flows through a turbine one inlet and two exits with know condition at the steady state ( hints: h1=3231KJ/kg, h2=2812 KJ/kg , specific volume (v)= 0.0994 m^3/kg , at p= 30 bars,v=0.4045m^3/kg, at p=5 bars, no potential and kinetic energy ch..
Get guaranteed satisfaction & time on delivery in every assignment order you paid with us! We ensure premium quality solution document along with free turntin report!
whatsapp: +1-415-670-9521
Phone: +1-415-670-9521
Email: [email protected]
All rights reserved! Copyrights ©2019-2020 ExpertsMind IT Educational Pvt Ltd