What is the origin of avalanche breakdown in a diode

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A silicon diode has a doping profile such that ND = ax3. What is the depth of the junction assuming the p side is uniformly doped with NA per cubic cm. Assume the x origin is at an ideal ohmic contact on the n side of the diode.

For the diode in problem 1b, if NA = 1015 and ND =1016 what is the built in potential (numeric value) of the diode?

What is the origin of avalanche breakdown in a diode?

Reference no: EM13262594

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