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Reconcile the two problems. Problem 1 and Problem 2, by estimating a oxide trap concentration for Problem 1 and a trapping efficiency for problem 2.
Problem 1
Electrons are slowly injected by tunneling Into the SiO2 from Si in a MOS transistor when a high electric field appears across the oxide. A small but significant fraction, about 10-4, of the injected electrons will be captured by oxide electron traps in the SiO2. The transistor will age and the MOS integrated circuit will fail when -1011q/cm2 charges are trapped in the oxide. Calculate the time to failure when 10V is applied to a 100A VLSI oxide. What is the maximum applied voltage to the oxide film for 10-year life?
Problem 2:-
The electron binding energy at an oxide trap is found to be leV and the potential barrier height between the Si and the SiO2 film grown on Si is 3.1eV. Electrons are slowly injected by tunneling from Si into a trap in the gate oxide of a MOS transistor when +1V is applied to a 100A-thick oxide film on the Si substrate. Suppose that the integrated circuit using this MOS transistor will fail when 1011 electron/cm2 are trapped at the oxide electron trap. How long does it take to fail if there are 1012 cm-2 unoccupied traps initially? What is the maximum applied voltage to the oxide for 10-year life?
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