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a) A silicon step junction diode with NA acceptor atoms on the p side and ND donor atoms on the n side is fabricated. The diode is not ideal. What is the dominant current mechanism for forward applied voltages close to zero?b) What is the origin of the reverse saturation current in an ideal diode?c) A silicon n+ - p step junction diode with ND = 1016/cm3 concentration has a built in potential of 0.656V at room temperature. What is the peak value of the electric field in the depletion region?d) For the diode in problem 2c above, what is the width of the depletion region?
A flat sheet of paper of area 0.150 m2 is oriented so that the normal to the sheet is at an angle of 65° to a uniform electric field of magnitude 29 N/C. (a) Find the magnitude of the electric flux through the sheet.
What is the frequency for a periodic signal with a period of 2.5 ns 2.5 GHz 250 MHz 4.0 GHZ 400 MHz 2. Which decimal number is equivalent to 25 10 25 31 32 3. Convert the following decimal negative numbers to their 8-bit, 2's complement formulatio..
Design a length-5 FIR bandpass filter with an antisymmetric impulse response h[n], i.e.., h[n]= -h[4-n], where (0 less tahn or qual n and 4 is bigger than or equal n), satisfy the following magnitude response values.
what is the difference between the words "rated as 3mA" , and "biased at 5mA" , when talking about a diode what is teh difference between saying " the diode is rated as a 3mA device", and " The diode is biased at a current of 0.5mA"
A BJT has beta =100,mod Aie=10 at 10 MHz and it is operating at a collector current of 5 mA.If transition capacitance =10pf 1) calculate beta cutoff frequency of BJT,unity gain frequency and diffusion capacitance
Design a circuit that takes the output from each of the five microphones your band uses and adds the voltage to create a single voltage signal which is fed to the amplifer. Except not all voltages should be equaly amplified.
Using D-type flip-flops, design a synchronous Moore finite-state machine that monitors two inputs A and B, and asserts a scalar output if the number of 1s observed on the inputs is a multiple of 4.
Write a 68000 assembly language subroutine, ROTMEM, which rotates the elements (words-size) of an array stored at location point to by (A0). The depth of the array is stored as the first element.
Consider a (1;N) SIMO channel (with N > 1), represented by a N x 1 channel vector h1 with hH1 h1 = II h1 II2 = 1. Suppose that the received signal is given by x = h1s + n, where the power of the data signal s is E(IsI2)= P
Consider a chip design using 10 mask levels. Suppose that each mask can be made with 98% yield. Determine the composite mask yield for the set of 10 masks.
You plan to integrate a sensor that operates at 24 VDC and 2A At distance of 100 feet from your controller under normal conditions. What gauge (AWG) of wire would you use if you needed to limit your power loss to 10%
If a silicon diffusion is doped with phosphorus (donors) at a concentration of 1.0 x 10^16/cm^3, and has a sheet resistance of 365.7 ohm/cm^2 square, what is the thickness of the diffusion in microns
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