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A pn-junction is formed in silicon by doping one side with acceptor atoms at concentration Na = 10^19 cm^(-3) and another side with donor atoms at Nd = 10^18 cm^(-3). Answer the following questions:
A. What is the dopant concentration on the p-type side and on the n-type side?
B. For the n-type side of the pn-junction at room temperature:
1. What is the hole and electron concentration on that side?
2. What is the resistivity of a silicon on that side (you can use approximate values for mobility from the graph)?
3. Assuming hypothetically that there is an electric field 100 V/cm, what would be the drift current density?
C. What is the value of the built-in potential barrier of the junction?
D. What is the depletion layer width of the pn-junction?
E. What is the width of the depletion layer on the p-type side?
A constant electric field, E=12 V/cm, exists in the +x direction of an n-type gallium arsenide semiconductor for . The total current density is constant and is equal to 100 A/cm2. At x=0, the drift and diffusion current densities are equal.
Let x1[n] = {-2,1,-3,-5,6,8} with arrow under -2 and x2[n]={1,2,3,4} with arrow under 1. a) determine circular convolution of 7 between x1[n] and x2[n] b) verify (a) calculations by computing the DFTs and IDFT.
A U manometer reads 20 cm air as operating fluid and a given manometric fluid. A single branch closed tube reads 35 cm connected to point 1. If P2 = 1.2 ATM calculate the pressure in point 1 and the density of the manometric fluid.
Complex Voltage = 10-j20. try to convert it to polar coordinate with my Ti 89 but I keep getting my answers in arc tan.
a half wave rectifier circuit with a 1K ohm load operates from a 120V rms 60-Hz household supply through a 10-to-1 step down transformer. It uses a silicon diode that can be modeled to have a 0.7V drop for any current.
Consider a VBE multiplier with R1=R2= 1.2k ohms utilizing a transistor that has VBE= 0.6V at Ic = 1ma, and a very high beta. (b) Find the value of the current I that will result in the terminal voltage changing (from the terminal voltage 1.2-v val..
The amount of three phase power to be delivered in kW is equal to the total number of letters in your name (first name +last name) and the single phase power is 10% of three phase power. Assume same power factor for both types of loads.
Design a full-wave bridge rectifier circuit to deliver 10 volts de with less than 0.1 volt (pp) ripple into a load draWing up to 10mA. Choose the appropriate ac input voltage. assuming 0.6 volt diode drops.
An indiviual wishes to deposit an amount of money now and $100 every six months so that at the end of five years $1500 will have been accumulated. With interest 4% per year, compounded semiannually, how much should be deposited?
Model and simulate a 4-to-1 multiplexer using (a) Dataflow Modeling, (b) Behavioral Modeling, and (c) Structural Modeling. Use Modelsim and a VHDL test bench to simulate all the three models for a 4-to-1 multiplexer.
a cost to produce, P, of $4.00. If we were able to reduce this to $3.55 through greater attention in the design, and if the cost to improve the design (in NRE) is $35,000, how many units must we sell to recover the increased design cost.
A control System with feedback has the following characteristic equation: s3 + (1 + K)s2 + 10s + (5 + 15K) = 0 The parameter K must be positive. When K is equal a single loop of wire with an enclosed area of 0.0900 m^2 is in a region of uniforfm mag..
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