A pn-junction is formed in silicon by doping one side with acceptor atoms at concentration Na = 10^19 cm^(-3) and another side with donor atoms at Nd = 10^18 cm^(-3). Answer the following questions:

A. What is the dopant concentration on the p-type side and on the n-type side?

B. For the n-type side of the pn-junction at room temperature:

1. What is the hole and electron concentration on that side?

2. What is the resistivity of a silicon on that side (you can use approximate values for mobility from the graph)?

3. Assuming hypothetically that there is an electric field 100 V/cm, what would be the drift current density?

C. What is the value of the built-in potential barrier of the junction?

D. What is the depletion layer width of the pn-junction?

E. What is the width of the depletion layer on the p-type side?

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