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A silicon semiconductor resistor is in the shape of a rectangular bar with a cross sectional area of 1x10^-6 cm^2 a length of 0.1 cm and is doped with a donor concentration of 5x10^16 cm^-3.
(a) Calculate the resistance of this resistor at 300K. The mobility is 1100 cm^2/Vs
(b) Calculate the current in the resistor if a bias of 5 volt is applied across the length of the device.
(c) What is the average electron drift velocity? (Hint E = V/L)
And how long it will take to reach that temperature assuming no heat lost in the process and comments on your results and may research the properties of nichrom wire to determine the resistivity of the wire
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