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1. What is meant by live-load chilling? What are the determining factors for when to charge and when discharge from thermal storage?
2. What is the difference between full and partial thermal storage systems?
3.. What can happen if the ice sensor for an ice-on-coil system is faulty? 4. What type of regular maintenance is required for an ice-on-coil internal melt thermal energy system?
5. What percentage of ethylene glycol is commonly used for an ice-on-coil (external melt) system?
6. Why is clear ice formation on an ice-on-coil thermal storage system desired?
find the complex exponential fourier series representation for a) x(t)=1 for t =1b) x(t)= t^2-1 for all t
Prove by construction that the NAND gate is universal by creating AND, OR, and NOT gates using only the NAND gate.
Assume the temperature is 300K and mobilities are u_n = 1300 cm^2/Vs and u_p = 450 cm^2/Vs. a. What are the majority and minority carrier concentrations b. What is the resistivity of the sample c. What is the resistance (end-to-end) of the sample
Derive a minimum-cost realization of the four variable function that is equal to 1 if exactly two or exactly three of itsvariables are equal to 1; otherwise it is equal to 0.
Design the circuit for the formation of pre-groups and reconversion according to Illustration 166 and Illustration 167. The bandwidth of the source signal - filtered noise - corresponds precisely to the bandwidth of a telephone signal of 300 -3400..
A three-phase overhead transmission line has a per-phase resistance of 0.15 ohm/km, and a per-phase inductance of 1.3263 mH/km.
Write a program to send the listed data stored at memory locations $2100-$210F to a subroutine that adds them up. Store the result at memory location
Design a circuit with input p and output f that will output f = 1 if the past three inputs (not including the current input), formed either 010 or 000. Otherwise, f = 0. Note: This is a Moore-type finite-state machine.
Vgs is the switchcontrol voltage. Find the switch on-resistance Rds and the voltageVds obtained when Vgs=5V and Id=1mA. If μp=0.5μn what must be the PMOS device W/L to provide the same NMOS on-resistance. AssumeVtn=|Vtp|.
Assume the wire capacitance in the ROM array is negligible compared to the gate and diffusion capacitance. Assume the ROM cells are laid out such that two cells share a single diffusion contact and hence each contributes only C/2 of diffusion capa..
A 450 piece/hr 10 hr B 500 piece/hr 8 hr A set of unsharpen ed tools costs $1,500 and can be ground 15 times. The cost of each grinding is $20. The time required to change and reset the tools is 2 hours, and such changes are made by a tool-setter.
Determine RC such that vo1 = vo2 = -0.2 V when v1 = -0.7 V. - Using the results of part (a), find vo1 and vo2 when (i) v1 = -1.0 V and (ii) v1 = -0.4 V.
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