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What is Intermediate switch , its construction and how it works?
Write a program in machine code to use a subroutine to find the sum of the array elements. For simplicity, assume that the sum of the data values is less than $FF. You do not need to use the BCC to check for carry flag. Follow the following ste..
Calculate the FLAT BAND POTENTIAL and the THRESHOLD VOLTAGE for a real n+ polysilicon / p- silicon MOS diode having Na= 1017 cm^-3 and oxide thickness d = 5 nm. Assume that the oxide has only fixed oxide charges (Qf)
A single-turn resonant circular loop with a /8 radius is made of copper wire with a wire radius of 10^4 pi f/2 and conductivity of 5.7 × 10^7S/m. For a frequency of 100 MHz, determine, assuming uniform current
That is, the Irms value of an oscillating current is found by calculating the average power in the resistor and equating it to the direct-current power. Based upon this definition, calculate Irms for square-wave currents.
A 6th order Chebyshev low pass filter has a 0.5dB ripple in the pass-band and has a cutoff frequency of 5Khz, determine the attenuation (dB) of the signal at: 1. 4Khz 2. 40Khz 3. 40Mhz
What is the maximum message bandwith for which the system operates satisfactorily? Determine the output signal to quantizing noise ratio when a full-load sinusoidal modulating wave of frequency 1 MHz is applied to the input.
Experiments have revealed that flow over the board is disturbed by the elements and that convection heat transfer is correlated by an expression of the form Nux = 0.4 Re0.85 Pr 1/3 . Estimate the surface temperature of the chip if it is dissipatin..
Consider an analog periodic sinusoid x(t) = cos (3*pi*t + pi/4) being sampled using a sampling period Ts to obtain the discrete time signal x[n] = x(t)I t=nTs = cos (3*pi*t + pi/4). a.) Determine the discrete frequency of x[n].
write a program that prints a one-month calendar. the user specifies the number of days in the month and the day of the
Consider putting down a metal electrode with a 4.50 eV work function on a piece of Ge which has an electron affinity of 4.00 eV, an intrinsic carrier concentration at 300K of 2.5 x 1013/cm3, and that is doped with 1.0 x 1016 donors/cm3.
A gas mixture contains 5 kg of N2 and 10 kg of O2. Determine the average molar mass and gas constant. What-if-scenario: How would the conclusion change if the gas mixture contained 10 kg of N2 and 5 kg of O2
what are the application of backward diode
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