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A silicon wafer with thickness of 925 µm is being heated with a uniform heat flux at the lower surface. The silicon wafer has a thermal conductivity that varies with temperature and can be expressed as: k(T) = (a+bT+cT2) W/m.K, where a = 437, b = -1.29, and c= 0.00111. To avoid warping, the temperature difference across the wafer thickness cannot exceed 20C. if the upper surface of the silicon wafer is at a uniform temperature of 600 K; determine the maximum allowable heat flux.
an ice chest is constructed of styrofoam k 0.033 wm?c with inside dimensions of 25 by 40 by 100 cm. the wall thickness
Water flows at a rate of 20 l/s through a horz pipe dia .03 m. The pressure drop across the valve in the pipe is measured to be 2 kPa. Determine the irreversible head loss of the valve, and the useful pumping power needed to overcome the resulting..
on an assembly line that fills 8-ounce cans a can will be rejected if its weight is less than 7.90 ounces. in a large
what kind of metals are often recommended for use at low temperatures particularly when any sudden loading of the part
Workout velocity and range of shell fired, Why is it possible to consider the vertical and horizontal motion of a projectile independently of each other.
Design a high pressure homogenizer for the manufacture of 10^6 kg per year of salad dressing.
we have a mixture that is 20 mol propane 35 mol n-butane and 45 mol n-hexane. if a flash drum operates at 400 kpa what
The assessment to design a substation and the associated protection System.
Determine the magnitude of the horizontal and vertical components of the force of the water on the gate.
a strain gauge that has a nominal resistance of 350 ohms and a gauge factor of 1.8 is mounted in an equal-arm bridge
1 calculate the angular velocity acceleration of a 2kg mass rotating in a horizontal circle of 2m radius if one
the 10-kg mass a is moving at 5 ms when it is 1 m from the stsaionary 10 kg mass b. the coefficiient of kinetic
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