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Show that a BCD ripple counter can be constructed from a four-bit binary ripple counter with asynchronous clear and a NAND gate that detects the occurrence of count 1010.
In a particular IC design in which the standard channel length is 2µm, an NMOS device with W/L of 5 operating at 100µA is found to have an output resistance of 0.5MO, about 1/4 of that needed.
if a 2.000Å (.2nm) photon interacts with the bound electron in an hydrogen atom (binding energy 13.6 eV) with a Compton collision. The electron moves forward in the same direction as the incident photon. It may be convenient to use hc 12408eV
derive the BER (Bit Error Rate) of a 8-PAM (Pulse Amplitude Modulation) system in an AWGN (Additive White Gaussian Noise) channel.
Derive a state table for the FSM that produces z=1 when it detects that either the sequence w:0010 or w:1110 has been applied; otherwise, z=0. After the fourth clock pulse, the machine has to be again in the reset state, ready for the next sequenc..
a) What current will flow in the diode if the forward voltage bias is raised to 0.8V b) What current will flow in the diode if the forward voltage bias is lowered to 0.6V c) What change in forward bias voltage will increase the diode current by a ..
A DSP system has a sampling frequency of 800 HZ. What is the maximum frequency of the analog signal so that the aliasing would not occur
Assume that there is about 1 toilet for every 3 persons, that existing toilets use an average of 15 liters per flush, that a toilet is flushed on average 14 times per day, and the cost to install each new toilet is $150.
A circular loop TV antenna with 0.01 m2 area is in the presence of a uniform -amplitude 300 MHz signal. When oriented for maximum response, the loop develops an emf with a peak value of 20 mV. What is the peak magnitude of B of the incident wave?
A chemical plant needs a microprocessor-driven alarm system to warnof critical conditions in one of its chemical tanks. Thethank has four HIGH/LOW (1/0) switches that monitor temperature(T), pressure (P), fluid (F), and weight (W).
Find the capacitance C for the partially-filled spherical capacitor consisting of an inner conducting sphere of radius a and an outer conducting sphere of radius c with the region a
A Si p+-n junction has the following parameters at 300K: taup = taug = 10-6 s, ND=1015 cm-3, and NA=1019 cm-3. Plot diffusion current density, generation current (Jgen) and total reverse current (JR) as a function
Use the formula for decibels, 20*log(|T|), to find out what the -3db value would be in Volts per volt when the pass band is 1 V/V, 2 V/V, 3 V/V. find the way to find this critical frequency value with out converting to decibels
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