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can u solve the attached file????????? <br/> <br/> <br/> <br/> <br/> <br/> <br/> <br/> <br/> <br/> <br/> <br/> <br/> <br/> <br/> <br/> <br/> <br/> <br/> <br/> <br/> <br/> <br/> <br/> <br/> <br/> <br/> <br/> <br/> <br/> <br/> <br/> <br/> <br/> <br/> <br/> <br/> <br/> <br/> <br/> <br/> <br/> <br/> <br/> <br/> <br/> <br/>
At time t = 0, the voltage across a 100-pF capacitor is -5 V. the current through the capacitor is 10[u(t) - u(t -10^-4)] μA. what is the voltage across the capacitor for t>0.
A current i(t) = 10r(t) mA is applied to a 10 mF capacitor for t > 0, where r(t) is the ramp function. At t= 0, the capacitor voltage was zero. The voltage across the capacitor at t = 2 s is
derive a general formula for percent clipping of a unit amplitude sinusoidal test signal; this is the percent of time during one period in which the signal is clipped. The formula includes peak sinusoidal voltage Vp that would appear at the ouput
A FIR filter is depicted in the figure below. Assume that the system is at rest and an input sequence is applied to the system. Determine the first seven samples of the system output Assume that the system is initially at rest. x(n)=u(n)+u(n-1)-2u..
A 460V load draws 18kVA at 0.82 pf, lagging. Find the kVAR of capacitance required to correct the power factor to 0.93, lagging.
The generator is delivering 48 MW to the bus bar at the rated voltage with its field current adjusted for a generated emf of 46 kV per phase. Determine the armature current and the power factor. State whether power factor is lagging or leading
A glass tube with a cross-sectional area of 9^-2 m^2 contains an ionizd gas. The densities are 10^15 positive ions/m^ and 10^11 free electrons/m^3. Under the influence of an applied voltage, the postive ions are moving.
Find the expression for the total equivalent capacitance for an array of n capacitors with arbitrary capacitance C1,C2,...,Cn; when they are connected a) inseries and b) in parallel.
design your circuit using only two, three, and four input NAND gates and inverters. try to minimize the number of gates and inverters required. the variables A, B, C, AND D will be available from toggle switches.
Suppose that we wished to match an admittance using a double-stub tuner where the stubs are lambda/4 apart. For what range of admittance values can
What is the system's Nyquist sample rate if ω0 = 1000/(2π) rad/sec.?
question 1-a p-well is to be formed for a cmos process. the n-type substrate has a doping level of 2times?10?15
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