Plot resistivity as a function of the fraction

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Reference no: EM131788907

Question: A boron-doped crystal pulled by the Czochralski technique is required to have a resistivity of 10 Ω cm when half the crystal is grown. Assuming that a 100-gm pure silicon charge is used, how much 0.01 Ω cm boron-doped silicon must be added to the melt? For this crystal, plot resistivity as a function of the fraction of the melt solidified. Assume k₀ = 0.8 and the hole mobility µ_p = 550 cm² volt^-1 sec^-1.

Reference no: EM131788907

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