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(Hazard-Free Design) Develop the Boolean expression in POS form found by removing the static-zero hazards from the following expression. Your circuit must be minimized to receive full credit. Draw the schematic for the hazard-free circuit. Assume that all literals and their complement are available as inputs.
F (W, X, Y, Z)= ?M(2, 3, 6, 7, 9, 11, 13, 15)
a solid cylindrical conductor of raduis a and charge Q is coaxial with a cylindrical shell of negligible thickness,radius b,and charge -Q. FIND THE CAPACITANCE OF THIS CYLINDRICAL capacitor if its length is l.
Control Systems and Laplace Transformations, What is the step response of a system whose transfer function has a zero at -1, a pole at -2 and a gain factor of 2?
1. Determine the minimum value of gain K when Gc(s)=K, so that the steady-state effect of a unit step disturbance Td(s)=1/s is less than or equal to 5% of the unit step (y(inf)=0.05). 2. Determine whether the system using the gain of part 1 is stab..
A microwave system requires a +4-dBm audio level to provide 100% modulation. Determine the voltage level required if this is a 600 ohm audio system.
A manufacturer specification sheet lists the transfer function of a pressure sensor as 45±5% mV/kPa with a time constant of 4±10%. A highly accurate test system applies a step change of pressure from 20 kPa to 100 kPa.
A 2000 hp, 1.0 power factor three phase Y connected 2300V, 30 Pole, 60Hz; synchronous motor has a synchronous reactance of 1.95 ohms/phase. For this problem all losses may be neglected.
derive a general formula for percent clipping of a unit amplitude sinusoidal test signal; this is the percent of time during one period in which the signal is clipped. The formula includes peak sinusoidal voltage Vp that would appear at the ouput
Write a program that generates 50 floating-point random numbers in a range from 0 to 10,000 using different seed values. Five floating-point random numbers per line are required to be displayed on the ouput.
An nMOSFET and pMOSFET are fabricated with substrate doping concentration of 6x1017/cm3. The gate oxide thickness is 5 nm. (a) Find Vt of the nMOSFET when n+ poly-Si is used to fabricate the gate electrode.
In a processing plant, jars on a conveyer belt are cleaned out with a high-pressure air jet just prior to being filled (Figure Below). When a jar approaches the cleaning station, it activates a switch (with both NO and NC contacts).
A generator (which may be represented by an emf in series with an inductive reactance) is rated 500MVA, 22kV. Its Y-connected windings have a reactance of 1.1 p.u. Find the ohmic value of the reactance of the windings.
A dc separately excited generator runs at 1200 rpm. the rated current and voltages are 100 A at 240 V. The armature resistance is 0.15 (ohms). The open circuit magnetization characteristics at 1200 rpm are
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