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An incandescent light bulb can be modeled as a resistor with a value of a few ohms. Imagine an incandescent light bulb goes out in your house. Using your trusty multimeter, how would you check if the bulb is bad and needs replacing?
A 6 pole, 60 hz induction motor is wye connected and has a rated slip of .03 with the follwoing parameters: Rs=0.5 ohms, Rr'=0.3ohms, Xs=J1 ohms, Xr'=J0.35 ohms, Xm=j20 ohmsand the total rotational losses=7300 watts.
Consider a multimode silica fiber that has a core refractive index of n1 = 1.48 and cladding index n2 = 1.46. Find the critical angle, numerical aperture and the acceptance angle.
A long wire carrying a 5.0 A current perpendicular to the xy-plane intersects the x-axis at x = -2.0 cm. A second, parallel wire carrying a 3.0 A current intersects the x-axis at x = +2.0 cm.
Suppose you are working for an aircraft company on a positioning control system that controls the position of the landing for their aircraft. This positioning system requires a feedback signal from a position sensor.
what would the relative sensitivity of the IR detector be if you use FREQOUT to send a 35 kHz harmonic? What is the relative sensitivity with a 36 kHz harmonic?
Compute the equilibrium carrier concentrations and the position of the Fermi level with respect to the conduction band edge for a uniformly doped Si region with N_D=1*10^16 cm^-3 and N_A = 1*10^17 cm^-3 at room temperature.
Consider a Si p-n junction with n-type doping concentration of 10^16 cm^-3. This junction is forward bias with V=0.8 V at 300 °K. Calculate the minority-carrier hole concentration at the edge of the space charge region.
Let y1(t)=y2(t)=t-1 over 0
the output voltage of battery drop from 6V .With no load to 5.2V with a load current of 400mA. calculate the internal resistance.
1. Provide 3 ways for creating proto-types of an electronic circuit. 2. Explain briefly, in outline form, and in your own words, the procedure for creating a single-sided, PCB (Printed Circuit Board), using the etching procedure.
A calibrated RTD with ALPHA = 0.0041/°C, R = 306.5 Ohms at 20°C, and PD = 30 mW/°C will be used to measure a critical reaction temperature. Temperature must be measured between 50° and 100°C with a resolution of at least 0.1°C.
Design a common-emitter BJT amplifier with a gain of -100 (well above 3dB point) and a 3dB point at 100Hz. Assume beta = 100, Ic (quiescent) = 1mA, Vcc=20V. You can omit the output capacitor, but should bypass your emitter resistor.
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