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How many electron-hole pairs are generated per second in Si by interband impact generation at x1 If E(x1)...3x105V/cm. If N(x1)=n1=1.0x1010cm-3, what is the number of electron-hole pairs generated per unit volume per second? How does this compare with the optical generation rate obtained In problem 1? (Use Figure 1).
Problem 1:-
Si, GaAs and CdS crystals are exposed to a yellow light of wavelength 5500A and intensity 1012 photons/cm2-sec. Verify that the photon energy Is 2.25eV. How many electron-hole pairs are generated per unit volume per second in each crystal?
Assume that crystal is very thin and the light is absorbed uniformly in the very thin slice. Why do we need to assume the crystal to be very thin? (Use λ-1.24/E and Fig 2.) (Partial answer: Si, 7x1015cm-3s-1.)
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In Fig. 15-53, three 18000 kg ore cars are held at rest on amine railway using a cable that is parallel to the rails, which areinclined at angle θ = 34°. The cable stretches 21 cm justbefore the coupling between the two lower cars breaks, detachin..
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