Give numerical values for the step heights at the interface

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Reference no: EM13250866

A window is etched through a 500 nm thick oxide on a [100] silicon wafer. The wafer is re-oxidized at 1100 °C using wet oxidation to grow a 750 nm thick film inside the window. Draw a cross-section of the wafer following the second oxidation. Give numerical values for the step heights at the interface and at the surface of the oxide.

Reference no: EM13250866

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